JPH0241170B2 - - Google Patents

Info

Publication number
JPH0241170B2
JPH0241170B2 JP56168910A JP16891081A JPH0241170B2 JP H0241170 B2 JPH0241170 B2 JP H0241170B2 JP 56168910 A JP56168910 A JP 56168910A JP 16891081 A JP16891081 A JP 16891081A JP H0241170 B2 JPH0241170 B2 JP H0241170B2
Authority
JP
Japan
Prior art keywords
layer
region
conductivity type
metal silicide
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56168910A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57100763A (en
Inventor
Bii Bora Majukaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS57100763A publication Critical patent/JPS57100763A/ja
Publication of JPH0241170B2 publication Critical patent/JPH0241170B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
JP56168910A 1980-10-23 1981-10-23 Lateral transistor with self-aligning base and base contact and method of producing same Granted JPS57100763A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19977180A 1980-10-23 1980-10-23

Publications (2)

Publication Number Publication Date
JPS57100763A JPS57100763A (en) 1982-06-23
JPH0241170B2 true JPH0241170B2 (en]) 1990-09-14

Family

ID=22738957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56168910A Granted JPS57100763A (en) 1980-10-23 1981-10-23 Lateral transistor with self-aligning base and base contact and method of producing same

Country Status (4)

Country Link
EP (1) EP0052038B1 (en])
JP (1) JPS57100763A (en])
CA (1) CA1179786A (en])
DE (1) DE3174777D1 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0483173A (ja) * 1990-07-26 1992-03-17 Tele Syst:Yugen 電力量計

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074477A (ja) * 1983-09-29 1985-04-26 Fujitsu Ltd 半導体装置及びその製造方法
EP0137992A3 (en) * 1983-09-29 1987-01-21 Fujitsu Limited Lateral bipolar transistor formed in a silicon on insulator (soi) substrate
NL8303467A (nl) * 1983-10-10 1985-05-01 Philips Nv Werkwijze voor het vervaardigen van een patroon van geleidend materiaal.
JPS6081864A (ja) * 1983-10-12 1985-05-09 Fujitsu Ltd ラテラル型トランジスタ
EP0180363B1 (en) * 1984-10-31 1994-04-13 Texas Instruments Incorporated Horizontal structure transistor and method of fabrication
US4897698A (en) * 1984-10-31 1990-01-30 Texas Instruments Incorporated Horizontal structure thin film transistor
GB2178593B (en) * 1985-08-02 1989-07-26 Stc Plc Transistor manufacture
US4792837A (en) * 1986-02-26 1988-12-20 Ge Solid State Patents, Inc. Orthogonal bipolar transistor
US4784966A (en) * 1987-06-02 1988-11-15 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
US5005066A (en) * 1987-06-02 1991-04-02 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
US4922315A (en) * 1987-11-13 1990-05-01 Kopin Corporation Control gate lateral silicon-on-insulator bipolar transistor
US5043786A (en) * 1989-04-13 1991-08-27 International Business Machines Corporation Lateral transistor and method of making same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1352044A (en) * 1971-04-21 1974-05-15 Garyainov S A Glazkov I M Raik Planar semiconductor device
JPS4915374A (en]) * 1972-05-18 1974-02-09
JPS49123274A (en]) * 1973-03-29 1974-11-26
US4201603A (en) * 1978-12-04 1980-05-06 Rca Corporation Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0483173A (ja) * 1990-07-26 1992-03-17 Tele Syst:Yugen 電力量計

Also Published As

Publication number Publication date
JPS57100763A (en) 1982-06-23
EP0052038A2 (en) 1982-05-19
EP0052038A3 (en) 1983-01-12
DE3174777D1 (en) 1986-07-10
CA1179786A (en) 1984-12-18
EP0052038B1 (en) 1986-06-04

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